Hydrogen-induced nanotunnel opening within semiconductor subsurface
One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide...
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Veröffentlicht in: | Nature communications 2013-11, Vol.4 (1), p.2800, Article 2800 |
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Sprache: | eng |
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Zusammenfassung: | One of the key steps in nanotechnology is our ability to engineer and fabricate low-dimensional nano-objects, such as quantum dots, nanowires, two-dimensional atomic layers or three-dimensional nano-porous systems. Here we report evidence of nanotunnel opening within the subsurface region of a wide band-gap semiconductor, silicon carbide. Such an effect is induced by selective hydrogen/deuterium interaction at the surface, which possesses intrinsic compressive stress. This finding is established with a combination of
ab-initio
computations, vibrational spectroscopy and synchrotron-radiation-based photoemission. Hydrogen/deuterium-induced puckering of the subsurface Si atoms marks the critical step in this nanotunnel opening. Depending on hydrogen/deuterium coverages, the nanotunnels are either metallic or semiconducting. Dangling bonds generated inside the nanotunnel offer a promising template to capture atoms or molecules. These features open nano-tailoring capabilities towards advanced applications in electronics, chemistry, storage, sensors or biotechnology. Understanding and controlling such a mechanism open routes towards surface/interface functionalization.
Silicon carbide surfaces offer many interesting properties induced by surface strain relief. Soukiassian
et al.
report hydrogen-induced self-organized nano-voids below a silicon carbide surface, and suggest the resultant nanotunnel may be used as a template to capture atoms or molecules. |
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ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/ncomms3800 |