Controlled assembly of graphene-capped nickel, cobalt and iron silicides

The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomp...

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Veröffentlicht in:Scientific reports 2013-07, Vol.3 (1), p.2168-2168, Article 2168
Hauptverfasser: Vilkov, O., Fedorov, A., Usachov, D., Yashina, L. V., Generalov, A. V., Borygina, K., Verbitskiy, N. I., Grüneis, A., Vyalikh, D. V.
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Sprache:eng
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Zusammenfassung:The unique properties of graphene have raised high expectations regarding its application in carbon-based nanoscale devices that could complement or replace traditional silicon technology. This gave rise to the vast amount of researches on how to fabricate high-quality graphene and graphene nanocomposites that is currently going on. Here we show that graphene can be successfully integrated with the established metal-silicide technology. Starting from thin monocrystalline films of nickel, cobalt and iron, we were able to form metal silicides of high quality with a variety of stoichiometries under a Chemical Vapor Deposition grown graphene layer. These graphene-capped silicides are reliably protected against oxidation and can cover a wide range of electronic materials/device applications. Most importantly, the coupling between the graphene layer and the silicides is rather weak and the properties of quasi-freestanding graphene are widely preserved.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep02168