Femtosecond pulsed laser deposition of silicon thin films

Femtosecond pulsed laser deposition of silicon thin films

Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for opt...

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Veröffentlicht in:Nanoscale research letters 2013-06, Vol.8 (1), p.272-272, Article 272
Hauptverfasser: Murray, Matthew, Jose, Gin, Richards, Billy, Jha, Animesh
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry and Materials Science
EMRS-E SiGe 2012
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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Beschreibung
Zusammenfassung:Optimisation of femtosecond pulsed laser deposition parameters for the fabrication of silicon thin films is discussed. Substrate temperature, gas pressure and gas type are used to better understand the deposition process and optimise it for the fabrication of high-quality thin films designed for optical and optoelectronic applications.
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/1556-276X-8-272