Three-Dimensional Graphene Nano-Networks with High Quality and Mass Production Capability via Precursor-Assisted Chemical Vapor Deposition

We report a novel approach to synthesize chemical vapor deposition-grown three-dimensional graphene nano-networks (3D-GNs) that can be mass produced with large-area coverage. Annealing of a PVA/iron precursor under a hydrogen environment, infiltrated into 3D-assembled-colloidal silicas reduces iron...

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Veröffentlicht in:Scientific reports 2013-05, Vol.3 (1), p.1788, Article 1788
Hauptverfasser: Yoon, Jong-Chul, Lee, Jung-Soo, Kim, Sun-I, Kim, Kwang-Hyun, Jang, Ji-Hyun
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Sprache:eng
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Zusammenfassung:We report a novel approach to synthesize chemical vapor deposition-grown three-dimensional graphene nano-networks (3D-GNs) that can be mass produced with large-area coverage. Annealing of a PVA/iron precursor under a hydrogen environment, infiltrated into 3D-assembled-colloidal silicas reduces iron ions and generates few-layer graphene by precipitation of carbon on the iron surface. The 3D-GN can be grown on any electronic device-compatible substrate, such as Al 2 O 3 , Si, GaN, or Quartz. The conductivity and surface area of a 3D-GN are 52 S/cm and 1,025 m 2 /g, respectively, which are much better than the previously reported values. Furthermore, electrochemical double-layer capacitors based on the 3D-GN have superior supercapacitor performance with a specific capacitance of 245 F/g and 96.5% retention after 6,000 cycles due to the outstanding conductivity and large surface area. The excellent performance of the 3D-GN as an electrode for supercapacitors suggests the great potential of interconnected graphene networks in nano-electronic devices and energy-related materials.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep01788