The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si 3 N 4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost...

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Veröffentlicht in:	Nanoscale research letters 2013-04, Vol.8 (1), p.192-192, Article 192
Hauptverfasser:	Wang, Ching-Chi, Liao, Po-Hsiang, Kuo, Ming-Hao, George, Tom, Li, Pei-Wen
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Materials Science Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering
Online-Zugang:	Volltext
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