The curious case of exploding quantum dots: anomalous migration and growth behaviors of Ge under Si oxidation

We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si 3 N 4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost...

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Veröffentlicht in:Nanoscale research letters 2013-04, Vol.8 (1), p.192-192, Article 192
Hauptverfasser: Wang, Ching-Chi, Liao, Po-Hsiang, Kuo, Ming-Hao, George, Tom, Li, Pei-Wen
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Sprache:eng
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Zusammenfassung:We have previously demonstrated the unique migration behavior of Ge quantum dots (QDs) through Si 3 N 4 layers during high-temperature oxidation. Penetration of these QDs into the underlying Si substrate however, leads to a completely different behavior: the Ge QDs ‘explode,’ regressing back almost to their origins as individual Ge nuclei as formed during the oxidation of the original nanopatterned SiGe structures used for their generation. A kinetics-based model is proposed to explain the anomalous migration behavior and morphology changes of the Ge QDs based on the Si flux generated during the oxidation of Si-containing layers.
ISSN:1931-7573
1556-276X
1556-276X
DOI:10.1186/1556-276X-8-192