Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
A sample of the β-Ga 2 O 3 /wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga 2 O 3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga 2 O 3 /wurtzite GaN heterostructure is mea...
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| Veröffentlicht in: | Nanoscale research letters 2012-10, Vol.7 (1), p.562-562, Article 562 |
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| Hauptverfasser: | , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A sample of the β-Ga
2
O
3
/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga
2
O
3
layer was formed epitaxially on GaN. The valence band offset of the β-Ga
2
O
3
/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga
2
O
3
/GaN structure is 1.40 ± 0.08 eV. |
|---|---|
| ISSN: | 1556-276X 1931-7573 1556-276X |
| DOI: | 10.1186/1556-276X-7-562 |