Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity
We report on the Mg-doped, indium-rich Ga x In 1− x N ( x
Gespeichert in:
| Veröffentlicht in: | Nanoscale research letters 2012-10, Vol.7 (1), p.574-574 |
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| container_title | Nanoscale research letters |
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| creator | Balkan, Naci Tiras, Engin Erol, Ayse Gunes, Mustafa Ardali, Sukru Arikan, MCetin Lagarde, Dalphine Carrère, Helene Marie, Xavier Gumus, Cebrail |
| description | We report on the Mg-doped, indium-rich Ga
x
In
1−
x
N (
x |
| doi_str_mv | 10.1186/1556-276X-7-574 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_3519824</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1238107434</sourcerecordid><originalsourceid>FETCH-LOGICAL-b432t-7b4266f603a07f6fe17fe70b51d0f6f1ea1e51ad0da39d2d1e2f899164c3ca63</originalsourceid><addsrcrecordid>eNp1kc1OxCAUhYnR-DO6dme6dCEKpYUZFyZq_EtG3bjQFaFwO2KmUGk7cd7AtY_ok0gzajTGFVzO4bs35yK0Tck-pUN-QPOc41TweyxwLrIltP79svzjvoY2muaJkEwQwVfRWsqIyIlg6-jhWGuoWx-S0odKtda7xLrkeoKNr8HsxcLYrsLB6sfkQr1cOfr--vZyc5jAzBpwGvqPSY3beQ2J9s50urUz28430Uqppg1sfZ4DdHd-dnd6ice3F1enx2NcZCxtsSiylPOSE6aIKHkJVJQgSJFTQ2JJQVHIqTLEKDYyqaGQlsPRiPJMM604G6CjBbbuigqMBtcGNZV1sJUKc-mVlb8VZx_lxM8ky-lomGYRcLIAFNb_A_itaF_JPlnZJyuFjLlHyO7nFME_d9C0srKNhulUOfBdI2nKhpREY2_d-Tnwd6OvnUQDWRiaKLkJBPnku-BihpIS2a_9T_sPV8Cg3w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1238107434</pqid></control><display><type>article</type><title>Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity</title><source>Full-Text Journals in Chemistry (Open access)</source><source>PubMed Central</source><source>Directory of Open Access Journals</source><source>EZB Electronic Journals Library</source><source>PubMed Central Open Access</source><creator>Balkan, Naci ; Tiras, Engin ; Erol, Ayse ; Gunes, Mustafa ; Ardali, Sukru ; Arikan, MCetin ; Lagarde, Dalphine ; Carrère, Helene ; Marie, Xavier ; Gumus, Cebrail</creator><creatorcontrib>Balkan, Naci ; Tiras, Engin ; Erol, Ayse ; Gunes, Mustafa ; Ardali, Sukru ; Arikan, MCetin ; Lagarde, Dalphine ; Carrère, Helene ; Marie, Xavier ; Gumus, Cebrail</creatorcontrib><description>We report on the Mg-doped, indium-rich Ga
x
In
1−
x
N (
x
< 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <
T
< 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at
T
> 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A
0
binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV.</description><identifier>ISSN: 1556-276X</identifier><identifier>ISSN: 1931-7573</identifier><identifier>EISSN: 1556-276X</identifier><identifier>DOI: 10.1186/1556-276X-7-574</identifier><identifier>PMID: 23075073</identifier><language>eng</language><publisher>New York: Springer New York</publisher><subject>Chemistry and Materials Science ; International Conference on Superlattices ; Materials Science ; Molecular Medicine ; Nano Express ; Nanochemistry ; Nanodevices (ICSNN 2012) ; Nanoscale Science and Technology ; Nanostructures ; Nanotechnology ; Nanotechnology and Microengineering</subject><ispartof>Nanoscale research letters, 2012-10, Vol.7 (1), p.574-574</ispartof><rights>Balkan et al.; licensee Springer. 2012. This article is published under license to BioMed Central Ltd. This is an Open Access article distributed under the terms of the Creative Commons Attribution License ( ), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.</rights><rights>Copyright ©2012 Balkan et al.; licensee Springer. 2012 Balkan et al.; licensee Springer.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-b432t-7b4266f603a07f6fe17fe70b51d0f6f1ea1e51ad0da39d2d1e2f899164c3ca63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519824/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC3519824/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,724,777,781,861,882,27905,27906,53772,53774</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23075073$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Balkan, Naci</creatorcontrib><creatorcontrib>Tiras, Engin</creatorcontrib><creatorcontrib>Erol, Ayse</creatorcontrib><creatorcontrib>Gunes, Mustafa</creatorcontrib><creatorcontrib>Ardali, Sukru</creatorcontrib><creatorcontrib>Arikan, MCetin</creatorcontrib><creatorcontrib>Lagarde, Dalphine</creatorcontrib><creatorcontrib>Carrère, Helene</creatorcontrib><creatorcontrib>Marie, Xavier</creatorcontrib><creatorcontrib>Gumus, Cebrail</creatorcontrib><title>Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity</title><title>Nanoscale research letters</title><addtitle>Nanoscale Res Lett</addtitle><addtitle>Nanoscale Res Lett</addtitle><description>We report on the Mg-doped, indium-rich Ga
x
In
1−
x
N (
x
< 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <
T
< 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at
T
> 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A
0
binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV.</description><subject>Chemistry and Materials Science</subject><subject>International Conference on Superlattices</subject><subject>Materials Science</subject><subject>Molecular Medicine</subject><subject>Nano Express</subject><subject>Nanochemistry</subject><subject>Nanodevices (ICSNN 2012)</subject><subject>Nanoscale Science and Technology</subject><subject>Nanostructures</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><issn>1556-276X</issn><issn>1931-7573</issn><issn>1556-276X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><recordid>eNp1kc1OxCAUhYnR-DO6dme6dCEKpYUZFyZq_EtG3bjQFaFwO2KmUGk7cd7AtY_ok0gzajTGFVzO4bs35yK0Tck-pUN-QPOc41TweyxwLrIltP79svzjvoY2muaJkEwQwVfRWsqIyIlg6-jhWGuoWx-S0odKtda7xLrkeoKNr8HsxcLYrsLB6sfkQr1cOfr--vZyc5jAzBpwGvqPSY3beQ2J9s50urUz28430Uqppg1sfZ4DdHd-dnd6ice3F1enx2NcZCxtsSiylPOSE6aIKHkJVJQgSJFTQ2JJQVHIqTLEKDYyqaGQlsPRiPJMM604G6CjBbbuigqMBtcGNZV1sJUKc-mVlb8VZx_lxM8ky-lomGYRcLIAFNb_A_itaF_JPlnZJyuFjLlHyO7nFME_d9C0srKNhulUOfBdI2nKhpREY2_d-Tnwd6OvnUQDWRiaKLkJBPnku-BihpIS2a_9T_sPV8Cg3w</recordid><startdate>20121018</startdate><enddate>20121018</enddate><creator>Balkan, Naci</creator><creator>Tiras, Engin</creator><creator>Erol, Ayse</creator><creator>Gunes, Mustafa</creator><creator>Ardali, Sukru</creator><creator>Arikan, MCetin</creator><creator>Lagarde, Dalphine</creator><creator>Carrère, Helene</creator><creator>Marie, Xavier</creator><creator>Gumus, Cebrail</creator><general>Springer New York</general><general>BioMed Central Ltd</general><general>Springer</general><scope>C6C</scope><scope>NPM</scope><scope>7X8</scope><scope>5PM</scope></search><sort><creationdate>20121018</creationdate><title>Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity</title><author>Balkan, Naci ; Tiras, Engin ; Erol, Ayse ; Gunes, Mustafa ; Ardali, Sukru ; Arikan, MCetin ; Lagarde, Dalphine ; Carrère, Helene ; Marie, Xavier ; Gumus, Cebrail</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-b432t-7b4266f603a07f6fe17fe70b51d0f6f1ea1e51ad0da39d2d1e2f899164c3ca63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Chemistry and Materials Science</topic><topic>International Conference on Superlattices</topic><topic>Materials Science</topic><topic>Molecular Medicine</topic><topic>Nano Express</topic><topic>Nanochemistry</topic><topic>Nanodevices (ICSNN 2012)</topic><topic>Nanoscale Science and Technology</topic><topic>Nanostructures</topic><topic>Nanotechnology</topic><topic>Nanotechnology and Microengineering</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Balkan, Naci</creatorcontrib><creatorcontrib>Tiras, Engin</creatorcontrib><creatorcontrib>Erol, Ayse</creatorcontrib><creatorcontrib>Gunes, Mustafa</creatorcontrib><creatorcontrib>Ardali, Sukru</creatorcontrib><creatorcontrib>Arikan, MCetin</creatorcontrib><creatorcontrib>Lagarde, Dalphine</creatorcontrib><creatorcontrib>Carrère, Helene</creatorcontrib><creatorcontrib>Marie, Xavier</creatorcontrib><creatorcontrib>Gumus, Cebrail</creatorcontrib><collection>SpringerOpen</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Nanoscale research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Balkan, Naci</au><au>Tiras, Engin</au><au>Erol, Ayse</au><au>Gunes, Mustafa</au><au>Ardali, Sukru</au><au>Arikan, MCetin</au><au>Lagarde, Dalphine</au><au>Carrère, Helene</au><au>Marie, Xavier</au><au>Gumus, Cebrail</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity</atitle><jtitle>Nanoscale research letters</jtitle><stitle>Nanoscale Res Lett</stitle><addtitle>Nanoscale Res Lett</addtitle><date>2012-10-18</date><risdate>2012</risdate><volume>7</volume><issue>1</issue><spage>574</spage><epage>574</epage><pages>574-574</pages><issn>1556-276X</issn><issn>1931-7573</issn><eissn>1556-276X</eissn><abstract>We report on the Mg-doped, indium-rich Ga
x
In
1−
x
N (
x
< 30). In the undoped material, the intrinsic electron density is very high and as a result there is no detectable photoconductivity (PC) signal within the range of temperatures of 30 <
T
< 300 K. In the Mg-doped material however, where the conductivity is reduced, there is a strong PC spectrum with two prominent low-energy peaks at 0.65 and 1.0 eV and one broad high-energy peak at around 1.35 eV. The temperature dependence of the spectral photoconductivity under constant illumination intensity, at
T
> 150 K, is determined by the longitudinal-optical phonon scattering together with the thermal regeneration of non-equilibrium minority carriers from traps with an average depth of 103 ± 15 meV. This value is close to the Mg binding energy in GaInN. The complementary measurements of transient photoluminescence at liquid He temperatures give the e-A
0
binding energy of approximately 100 meV. Furthermore, Hall measurements in the Mg-doped material also indicate an activated behaviour with an acceptor binding energy of 108 ± 20 meV.</abstract><cop>New York</cop><pub>Springer New York</pub><pmid>23075073</pmid><doi>10.1186/1556-276X-7-574</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| source | Full-Text Journals in Chemistry (Open access); PubMed Central; Directory of Open Access Journals; EZB Electronic Journals Library; PubMed Central Open Access |
| subjects | Chemistry and Materials Science International Conference on Superlattices Materials Science Molecular Medicine Nano Express Nanochemistry Nanodevices (ICSNN 2012) Nanoscale Science and Technology Nanostructures Nanotechnology Nanotechnology and Microengineering |
| title | Acceptor formation in Mg-doped, indium-rich GaxIn1−xN: evidence for p-type conductivity |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T14%3A46%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Acceptor%20formation%20in%20Mg-doped,%20indium-rich%20GaxIn1%E2%88%92xN:%20evidence%20for%20p-type%20conductivity&rft.jtitle=Nanoscale%20research%20letters&rft.au=Balkan,%20Naci&rft.date=2012-10-18&rft.volume=7&rft.issue=1&rft.spage=574&rft.epage=574&rft.pages=574-574&rft.issn=1556-276X&rft.eissn=1556-276X&rft_id=info:doi/10.1186/1556-276X-7-574&rft_dat=%3Cproquest_pubme%3E1238107434%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1238107434&rft_id=info:pmid/23075073&rfr_iscdi=true |