Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics

Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic sys...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2012-08, Vol.101 (9)
Hauptverfasser: Xie, Xianzong, Rieth, Loren, Merugu, Srinivas, Tathireddy, Prashant, Solzbacher, Florian
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic systems. The Al2O3-parylene C bi-layer was used to encapsulate interdigitated electrodes, which were tested invitro by soak testing in phosphate buffered saline solution at body temperature (37 degree C) and elevated temperatures (57 degree C and 67 degree C) for accelerated lifetime testing up to 5 months. Leakage current and electrochemical impedance spectroscopy were measured for evaluating the integrity and insulation performance of the coating. Leakage current was stably about 15 pA at 5 V dc, and impedance was constantly about 3.5 M[ohm at 1 kHz by using electrochemical impedance spectroscopy for samples under 67 degree C about 5 months (approximately equivalent to 40 months at 37 degree C). Alumina and parylene coating lasted at least 3 times longer than parylene coated samples tested at 80 degree C. The excellent insulation performance of the encapsulation shows its potential usefulness for chronic implants.
ISSN:0003-6951
0003-6951
DOI:10.1063/1.4748322