Reproducibility and stability of C60 based organic field effect transistor
► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design. A comprehensive study con...
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| Veröffentlicht in: | Synthetic metals 2012-01, Vol.161 (23-24), p.2562-2565 |
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| container_issue | 23-24 |
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| container_title | Synthetic metals |
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| creator | Ahmed, Rizwan Sams, Michael Simbrunner, Clemens Ullah, Mujeeb Rehman, Kamila Schwabegger, Günther Sitter, H. Ostermann, Timm |
| description | ► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design.
A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements. |
| doi_str_mv | 10.1016/j.synthmet.2011.08.008 |
| format | Article |
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A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements.</description><identifier>ISSN: 0379-6779</identifier><identifier>EISSN: 1879-3290</identifier><identifier>DOI: 10.1016/j.synthmet.2011.08.008</identifier><identifier>PMID: 22368321</identifier><identifier>CODEN: SYMEDZ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Buckminsterfullerene ; C60 ; Electronics ; Exact sciences and technology ; Field effect transistors ; Fullerenes ; Long time measurement ; n-Type OFET ; Reproducibility ; Reproducibility and stability of OFET ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stability ; Time measurement ; Transistors</subject><ispartof>Synthetic metals, 2012-01, Vol.161 (23-24), p.2562-2565</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><rights>2012 Elsevier B.V. 2011 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3238-f52496fd0d8dbd66a8d660de9158f892decd837de4999cfc9a2f3db87bb87e453</citedby><cites>FETCH-LOGICAL-c3238-f52496fd0d8dbd66a8d660de9158f892decd837de4999cfc9a2f3db87bb87e453</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0379677911003377$$EHTML$$P50$$Gelsevier$$Hfree_for_read</linktohtml><link.rule.ids>230,309,310,314,776,780,785,786,881,3537,4036,4037,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25482663$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ahmed, Rizwan</creatorcontrib><creatorcontrib>Sams, Michael</creatorcontrib><creatorcontrib>Simbrunner, Clemens</creatorcontrib><creatorcontrib>Ullah, Mujeeb</creatorcontrib><creatorcontrib>Rehman, Kamila</creatorcontrib><creatorcontrib>Schwabegger, Günther</creatorcontrib><creatorcontrib>Sitter, H.</creatorcontrib><creatorcontrib>Ostermann, Timm</creatorcontrib><title>Reproducibility and stability of C60 based organic field effect transistor</title><title>Synthetic metals</title><description>► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design.
A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements.</description><subject>Applied sciences</subject><subject>Buckminsterfullerene</subject><subject>C60</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Field effect transistors</subject><subject>Fullerenes</subject><subject>Long time measurement</subject><subject>n-Type OFET</subject><subject>Reproducibility</subject><subject>Reproducibility and stability of OFET</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stability</subject><subject>Time measurement</subject><subject>Transistors</subject><issn>0379-6779</issn><issn>1879-3290</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFUU1rGzEQFSWhcdP-hbKXQC7ejiSvVrqEFpP0A0OgtGehlUaJzHrlSLsG__vI2AnklIOkGfTmveE9Qr5SqClQ8W1d5_0wPm5wrBlQWoOsAeQHMqOyVXPOFJyRGfBSi7ZVF-RTzmsAoIo1H8kFY1xIzuiM_PmL2xTdZEMX-jDuKzO4Ko_m1EVfLQVUncnoqpgezBBs5QP2rkLv0Y7VmMyQQx5j-kzOvekzfjm9l-T_3e2_5a_56v7n7-WP1dxyxuXcN2yhhHfgpOucEEaWCxwq2kgvFXNoneStw4VSynqrDPPcdbLtysFFwy_JzZF3O3UbdBaHskOvtylsTNrraIJ--zOER_0Qd5qzlhYDCsH1iSDFpwnzqDchW-x7M2CcsqaipZxDQw9a4gi1Keac0L_KUNCHIPRavwShD0FokLoEUQavThomW9P74pIN-XWaNQvJhOAF9_2Iw-LYLmDS2QYcLLqQir3axfCe1DM-rqKs</recordid><startdate>201201</startdate><enddate>201201</enddate><creator>Ahmed, Rizwan</creator><creator>Sams, Michael</creator><creator>Simbrunner, Clemens</creator><creator>Ullah, Mujeeb</creator><creator>Rehman, Kamila</creator><creator>Schwabegger, Günther</creator><creator>Sitter, H.</creator><creator>Ostermann, Timm</creator><general>Elsevier B.V</general><general>Elsevier</general><general>Elsevier Sequoia</general><scope>6I.</scope><scope>AAFTH</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>5PM</scope></search><sort><creationdate>201201</creationdate><title>Reproducibility and stability of C60 based organic field effect transistor</title><author>Ahmed, Rizwan ; Sams, Michael ; Simbrunner, Clemens ; Ullah, Mujeeb ; Rehman, Kamila ; Schwabegger, Günther ; Sitter, H. ; Ostermann, Timm</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3238-f52496fd0d8dbd66a8d660de9158f892decd837de4999cfc9a2f3db87bb87e453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Buckminsterfullerene</topic><topic>C60</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Field effect transistors</topic><topic>Fullerenes</topic><topic>Long time measurement</topic><topic>n-Type OFET</topic><topic>Reproducibility</topic><topic>Reproducibility and stability of OFET</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stability</topic><topic>Time measurement</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ahmed, Rizwan</creatorcontrib><creatorcontrib>Sams, Michael</creatorcontrib><creatorcontrib>Simbrunner, Clemens</creatorcontrib><creatorcontrib>Ullah, Mujeeb</creatorcontrib><creatorcontrib>Rehman, Kamila</creatorcontrib><creatorcontrib>Schwabegger, Günther</creatorcontrib><creatorcontrib>Sitter, H.</creatorcontrib><creatorcontrib>Ostermann, Timm</creatorcontrib><collection>ScienceDirect Open Access Titles</collection><collection>Elsevier:ScienceDirect:Open Access</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>Synthetic metals</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ahmed, Rizwan</au><au>Sams, Michael</au><au>Simbrunner, Clemens</au><au>Ullah, Mujeeb</au><au>Rehman, Kamila</au><au>Schwabegger, Günther</au><au>Sitter, H.</au><au>Ostermann, Timm</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reproducibility and stability of C60 based organic field effect transistor</atitle><jtitle>Synthetic metals</jtitle><date>2012-01</date><risdate>2012</risdate><volume>161</volume><issue>23-24</issue><spage>2562</spage><epage>2565</epage><pages>2562-2565</pages><issn>0379-6779</issn><eissn>1879-3290</eissn><coden>SYMEDZ</coden><abstract>► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design.
A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><pmid>22368321</pmid><doi>10.1016/j.synthmet.2011.08.008</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Buckminsterfullerene C60 Electronics Exact sciences and technology Field effect transistors Fullerenes Long time measurement n-Type OFET Reproducibility Reproducibility and stability of OFET Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stability Time measurement Transistors |
| title | Reproducibility and stability of C60 based organic field effect transistor |
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