Reproducibility and stability of C60 based organic field effect transistor
► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design. A comprehensive study con...
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Veröffentlicht in: | Synthetic metals 2012-01, Vol.161 (23-24), p.2562-2565 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | ► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design.
A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements. |
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ISSN: | 0379-6779 1879-3290 |
DOI: | 10.1016/j.synthmet.2011.08.008 |