Reproducibility and stability of C60 based organic field effect transistor

► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design. A comprehensive study con...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Synthetic metals 2012-01, Vol.161 (23-24), p.2562-2565
Hauptverfasser: Ahmed, Rizwan, Sams, Michael, Simbrunner, Clemens, Ullah, Mujeeb, Rehman, Kamila, Schwabegger, Günther, Sitter, H., Ostermann, Timm
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:► Reproducibility and stability measurements of organic field effect transistors (OFET). ► Biased stress stability of n-type OFET. ► The role of reproducibility and stability in organic electronic circuit. ► Providing well defined limits for the modelling of circuit design. A comprehensive study concerning the reproducibility and stability of organic n-type field effect transistors is presented. C60 based OFETs were chosen to investigate the fabrication reproducibility and the long term stability because C60 is a high mobility n-type material. We fabricated 48 transistors and each transistor was measured for 24h inside the glove box. To test for life time stability – long term measurements up to three months have been undertaken. We report about the fluctuations in the device parameters of all investigated transistors by comparing the transfer characteristics, and on/off ratio for short time and long time measurements. C60 based OFETs showed good reproducibility and stability for short time measurements and a decay for long time measurements.
ISSN:0379-6779
1879-3290
DOI:10.1016/j.synthmet.2011.08.008