Magnetoresistance in Sn-Doped In2O3Nanowires

In this work, we present transport measurements of individual Sn-doped In 2 O 3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in...

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Veröffentlicht in:Nanoscale research letters 2009-07, Vol.4 (8), p.921-925, Article 921
Hauptverfasser: Berengue, Olívia M, Lanfredi, AlexandreJC, Pozzi, Livia P, Rey, JoséFQ, Leite, Edson R, Chiquito, Adenilson J
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Sprache:eng
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