Magnetoresistance in Sn-Doped In2O3Nanowires

Magnetoresistance in Sn-Doped In2O3Nanowires

In this work, we present transport measurements of individual Sn-doped In 2 O 3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in...

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Veröffentlicht in:Nanoscale research letters 2009-07, Vol.4 (8), p.921-925, Article 921
Hauptverfasser: Berengue, Olívia M, Lanfredi, AlexandreJC, Pozzi, Livia P, Rey, JoséFQ, Leite, Edson R, Chiquito, Adenilson J
Format: Artikel
Sprache:eng
Schlagworte:
Chemistry and Materials Science
Materials Science
Molecular Medicine
Nano Express
Nanochemistry
Nanoscale Science and Technology
Nanotechnology
Nanotechnology and Microengineering
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Zusammenfassung:In this work, we present transport measurements of individual Sn-doped In 2 O 3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
ISSN:1556-276X
1931-7573
1556-276X
DOI:10.1007/s11671-009-9336-4