Magnetoresistance effect of nitrogen doped graphdiyne

This investigation elucidates the influence of nitrogen doping (N-doping) on the magnetoresistance (MR) characteristics of graphdiyne (GDY) by methodically adjusting the levels of N-doping. Through exhaustive experimental analyses, encompassing SEM, XPS, and magneto-transport measurements, we demonstrate that N-doping markedly augments carrier concentration, thereby inducing distinct MR behaviors. Specifically, N 30 -GDY manifests negative magnetoresistance (NMR) attributable to weak localization phenomena, whereas N 60 -GDY and N 90 -GDY exhibit positive magnetoresistance (PMR) characterized by significant resistance enhancements. These results not only clarify the underlying mechanisms governing the MR properties of GDY but also introduce a novel strategy for optimizing MR performance via controlled heteroatom doping, thereby holding considerable implications for the advancement of carbon-based electronic devices. This investigation elucidates the influence of nitrogen doping (N-doping) on the magnetoresistance (MR) characteristics of graphdiyne (GDY) by methodically adjusting the levels of N-doping.