Dithienonaphthobisthiadiazole synthesized by thienannulation of electron-deficient rings: an acceptor building unit for high-performance π-conjugated polymers
The development of building units for π-conjugated polymers is a driving force in advancing the field of organic electronics. In this study, we designed and synthesized dithienonaphthobisthiadiazole (TNT) as a thiophene-fused acceptor (A) building unit and two TNT-based π-conjugated polymers named P...
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Veröffentlicht in: | Chemical science (Cambridge) 2024-12, Vol.15 (47), p.19991-21 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The development of building units for π-conjugated polymers is a driving force in advancing the field of organic electronics. In this study, we designed and synthesized dithienonaphthobisthiadiazole (TNT) as a thiophene-fused acceptor (A) building unit and two TNT-based π-conjugated polymers named
PTNT2T
and
PTNT1-F
. We found that the microwave-assisted thiophene annulation reaction (thienannulation) of arylethynylated naphthobisthiadiazole (NTz)
via
C-H functionalization effectively produced TNT moieties. With the π-extended structure of TNT, the polymers had rigid backbones that benefited in-plane and out-of-plane charge carrier transport. Organic field-effect transistors (OFETs) based on
PTNT2T
exhibited hole mobilities as high as 1.10 cm
2
V
−1
s
−1
. Furthermore, organic photovoltaic cells (OPVs) based on
PTNT1-F
showed high power conversion efficiencies of up to 17.4% when combined with a nonfullerene acceptor. This work provides an efficient method for the thienannulation of electron-deficient rings to access thiophene-fused A building units and shows the great promise of TNT as a building unit for high-performance π-conjugated polymers for organic electronic devices.
Dithienonaphthobisthiadiazole is developed as a new thiophene-fused acceptor building unit for π-conjugated polymers. The polymers demonstrate high transistor mobilities of >1 cm
2
V
−1
s
−1
and photovoltaic performance with efficiencies of >17%. |
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ISSN: | 2041-6520 2041-6539 |
DOI: | 10.1039/d4sc05793g |