Quadrupling the depairing current density in the iron-based superconductor SmFeAsO1–xHx

Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities J c . The typical approach to increasing J c is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be li...

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Veröffentlicht in:Nature materials 2024-10, Vol.23 (10), p.1370-1378
Hauptverfasser: Miura, Masashi, Eley, Serena, Iida, Kazumasa, Hanzawa, Kota, Matsumoto, Jumpei, Hiramatsu, Hidenori, Ogimoto, Yuki, Suzuki, Takumi, Kobayashi, Tomoki, Ozaki, Toshinori, Kurokawa, Hodaka, Sekiya, Naoto, Yoshida, Ryuji, Kato, Takeharu, Okada, Tatsunori, Okazaki, Hiroyuki, Yamaki, Tetsuya, Hänisch, Jens, Awaji, Satoshi, Maeda, Atsutaka, Maiorov, Boris, Hosono, Hideo
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Sprache:eng
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Zusammenfassung:Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities J c . The typical approach to increasing J c is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be limited to achieving a maximum J c of only ∼30% of the depairing current density J d , which depends on the coherence length and the penetration depth. Here we dramatically boost J c in SmFeAsO 1– x H x films using a thermodynamic approach aimed at increasing J d and incorporating vortex pinning centres. Specifically, we reduce the penetration depth, coherence length and critical field anisotropy by increasing the carrier density through high electron doping using H substitution. Remarkably, the quadrupled J d reaches 415 MA cm –2 , a value comparable to cuprates. Finally, by introducing defects using proton irradiation, we obtain high J c values in fields up to 25 T. We apply this method to other iron-based superconductors and achieve a similar enhancement of current densities. The authors report very high in-field critical current densities in Fe-based superconductors. They achieve this through doping to increase the carrier density and adding defects to pin vortices.
ISSN:1476-1122
1476-4660
1476-4660
DOI:10.1038/s41563-024-01952-7