Wetting Behavior of Inkjet-Printed Electronic Inks on Patterned Substrates

In inkjet printing technology, one important factor influencing the printing quality and reliability of printed films is the interaction of the jetted ink with the substrate surface. This short-range interaction determines the wettability and the adhesion of the ink to the solid surface and is hence...

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Veröffentlicht in:Langmuir 2024-03, Vol.40 (10), p.5162-5173
Hauptverfasser: Arya, Pooja, Wu, Yanchen, Wang, Fei, Wang, Zhenwu, Cadilha Marques, Gabriel, Levkin, Pavel A., Nestler, Britta, Aghassi-Hagmann, Jasmin
Format: Artikel
Sprache:eng
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Zusammenfassung:In inkjet printing technology, one important factor influencing the printing quality and reliability of printed films is the interaction of the jetted ink with the substrate surface. This short-range interaction determines the wettability and the adhesion of the ink to the solid surface and is hence responsible for the final shape of the deposited ink. Here, we investigate wetting morphologies of inkjet-printed inks on patterned substrates by carefully designed experimental test structures and simulations. The contact angles, the surface properties, and drop shapes, as well as their influence on the device variability, are experimentally and theoretically analyzed. For the simulations, we employ the phase-field method, which is based on the free energy minimization of the two-phase system with the given wetting boundary conditions. Through a systematic investigation of printed drops on patterned substrates consisting of hydrophilic and hydrophobic areas, we report that the printed morphology is related not only to the designed layout and the drop volume but also to the printing strategy and the wettability. Furthermore, we show how one can modify the intrinsic wettability of the patterned substrates to enhance the printing quality and reliability. Based on the present findings, we cast light on the improvement of the fabrication quality of thin film transistors.
ISSN:0743-7463
1520-5827
DOI:10.1021/acs.langmuir.3c03297