Ferroelectric Domain Wall p–n Junctions

We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted...

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Veröffentlicht in:Nano letters 2023-11, Vol.23 (22), p.10360-10366
Hauptverfasser: Maguire, Jesi R., McCluskey, Conor J., Holsgrove, Kristina M., Suna, Ahmet, Kumar, Amit, McQuaid, Raymond G. P., Gregg, J. Marty
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Sprache:eng
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Zusammenfassung:We have used high-voltage Kelvin probe force microscopy to map the spatial distribution of electrical potential, dropped along curved current-carrying conducting domain walls, in x-cut single-crystal ferroelectric lithium niobate thin films. We find that in-operando potential profiles and extracted electric fields, associated with p-n junctions contained within the walls, can be fully rationalized through expected variations in wall resistivity alone. There is no need to invoke additional physics (carrier depletion zones and space-charge fields) normally associated with extrinsically doped semiconductor p-n junctions. Indeed, we argue that this should not even be expected, as inherent Fermi level differences between p and n regions, at the core of conventional p-n junction behavior, cannot occur in domain walls that are surrounded by a common matrix. This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.3c02966