Fabrication of Fe–Fe1−xO based 3D coplanar microsupercapacitors by electric discharge rusting of pure iron substrates

Iron oxides with advanced functional properties show great potential for applications in the fields of water splitting, drug delivery, sensors, batteries and supercapacitors. However, it is challenging to develop a simple and efficient strategy for fabricating patterned iron oxide based electrodes f...

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Veröffentlicht in:RSC advances 2023-09, Vol.13 (38), p.26995-27005
Hauptverfasser: Chen, Ri, Xu, Zehan, Xie, Weijun, Deng, Peiquan, Xu, Yunying, Xu, Lanying, Zhang, Guoying, Yang, Yong, Xie, Guangming, Zhitomirsky, Igor, Shi, Kaiyuan
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Sprache:eng
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Zusammenfassung:Iron oxides with advanced functional properties show great potential for applications in the fields of water splitting, drug delivery, sensors, batteries and supercapacitors. However, it is challenging to develop a simple and efficient strategy for fabricating patterned iron oxide based electrodes for supercapacitor applications. Herein, a facile, simple, scalable, binder-free, surfactant-free and conductive additive-free electric discharge rusting (EDR) technique is proposed to directly synthesize Fe1−xO oxide layer on a pure iron substrate. This new EDR strategy is successfully adopted to fabricate Fe–Fe1−xO integrative patterned electrodes and coplanar microsupercapacitors (CMSC) in one step. The CMSC devices with different geometries could be directly patterned by EDR, which is automatically controlled by a computer numerical control system. The fabricated Fe–Fe1−xO based 3D 2F-CMSC exhibits a maximum areal specific capacitance of 112.4 mF cm−2. Another important finding is the fabrication of 3D 2F-CMSC devices, which show good capacitive behavior at an ultra high scanning rate of 20 000 mV s−1. The results prove that EDR is a low-cost and versatile strategy for the scalable fabrication of high-performance patterned supercapacitor integrative electrodes and devices. Furthermore, it is a versatile technique which shows a great potential for development of next generation microelectronic devices, such as microbatteries and microsensors.
ISSN:2046-2069
DOI:10.1039/d3ra04838a