Reductive Thermal Atomic Layer Deposition Process for Gold

Reductive Thermal Atomic Layer Deposition Process for Gold

In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for t...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS Materials Au 2023-05, Vol.3 (3), p.206-214
Hauptverfasser: Vihervaara, Anton, Hatanpää, Timo, Nieminen, Heta-Elisa, Mizohata, Kenichiro, Chundak, Mykhailo, Ritala, Mikko
Format: Artikel
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 214
container_issue 3
container_start_page 206
container_title ACS Materials Au
container_volume 3
creator Vihervaara, Anton
Hatanpää, Timo
Nieminen, Heta-Elisa
Mizohata, Kenichiro
Chundak, Mykhailo
Ritala, Mikko
description In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.
doi_str_mv 10.1021/acsmaterialsau.2c00075
format Article
fullrecord <record><control><sourceid>proquest_N~.</sourceid><recordid>TN_cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_10176613</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2902974827</sourcerecordid><originalsourceid>FETCH-LOGICAL-a458t-f60e1dc5759cfa636ac7103dfde9084e1e4e77ca5fe6610a904538e5663787163</originalsourceid><addsrcrecordid>eNqFkE1LAzEQhoMoVmr_Qtmjl9Z8bJJdL1KqVqGgSD2HmJ21KbubmuwW-u-NtJb25GkG5plnhhehIcFjgim51SbUugVvdRV0N6YGYyz5GbqiIk9HNBXk_KjvoUEIq4hQThgV9BL1WIaznDB2he7eoehMazeQLJbga10lk9bV1iRzvQWfPMDaBdta1yRv3hkIISmdT2auKq7RRRkfgMG-9tHH0-Ni-jyav85eppP5SKc8a0elwEAKwyXPTakFE9pIgllRFpDjLAUCKUhpNC9BCIJ1jlPOMuBCMJlJIlgf3e-86-6zhsJA03pdqbW3tfZb5bRVp5PGLtWX2yiCiYxKFg03e4N33x2EVtU2GKgq3YDrgqI5prlMMyojKnao8S4ED-XhDsHqN3x1Gr7ahx8Xh8dfHtb-oo4A3QFRoFau800U_Gf9Acx_lg4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2902974827</pqid></control><display><type>article</type><title>Reductive Thermal Atomic Layer Deposition Process for Gold</title><source>American Chemical Society (ACS) Open Access Journals</source><creator>Vihervaara, Anton ; Hatanpää, Timo ; Nieminen, Heta-Elisa ; Mizohata, Kenichiro ; Chundak, Mykhailo ; Ritala, Mikko</creator><creatorcontrib>Vihervaara, Anton ; Hatanpää, Timo ; Nieminen, Heta-Elisa ; Mizohata, Kenichiro ; Chundak, Mykhailo ; Ritala, Mikko</creatorcontrib><description>In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.</description><identifier>ISSN: 2694-2461</identifier><identifier>EISSN: 2694-2461</identifier><identifier>DOI: 10.1021/acsmaterialsau.2c00075</identifier><identifier>PMID: 38089133</identifier><language>eng</language><publisher>United States: American Chemical Society</publisher><ispartof>ACS Materials Au, 2023-05, Vol.3 (3), p.206-214</ispartof><rights>2023 The Authors. Published by American Chemical Society</rights><rights>2023 The Authors. Published by American Chemical Society.</rights><rights>2023 The Authors. Published by American Chemical Society 2023 The Authors</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a458t-f60e1dc5759cfa636ac7103dfde9084e1e4e77ca5fe6610a904538e5663787163</citedby><cites>FETCH-LOGICAL-a458t-f60e1dc5759cfa636ac7103dfde9084e1e4e77ca5fe6610a904538e5663787163</cites><orcidid>0000-0002-7593-5690 ; 0000-0002-6210-2980 ; 0000-0003-3745-8296 ; 0000-0003-4417-1832 ; 0000-0003-1361-3829</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/acsmaterialsau.2c00075$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/acsmaterialsau.2c00075$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>230,314,727,780,784,864,885,27080,27924,27925,53791,53793,56762,56812</link.rule.ids><linktorsrc>$$Uhttp://dx.doi.org/10.1021/acsmaterialsau.2c00075$$EView_record_in_American_Chemical_Society$$FView_record_in_$$GAmerican_Chemical_Society</linktorsrc><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38089133$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Vihervaara, Anton</creatorcontrib><creatorcontrib>Hatanpää, Timo</creatorcontrib><creatorcontrib>Nieminen, Heta-Elisa</creatorcontrib><creatorcontrib>Mizohata, Kenichiro</creatorcontrib><creatorcontrib>Chundak, Mykhailo</creatorcontrib><creatorcontrib>Ritala, Mikko</creatorcontrib><title>Reductive Thermal Atomic Layer Deposition Process for Gold</title><title>ACS Materials Au</title><addtitle>ACS Mater. Au</addtitle><description>In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.</description><issn>2694-2461</issn><issn>2694-2461</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNqFkE1LAzEQhoMoVmr_Qtmjl9Z8bJJdL1KqVqGgSD2HmJ21KbubmuwW-u-NtJb25GkG5plnhhehIcFjgim51SbUugVvdRV0N6YGYyz5GbqiIk9HNBXk_KjvoUEIq4hQThgV9BL1WIaznDB2he7eoehMazeQLJbga10lk9bV1iRzvQWfPMDaBdta1yRv3hkIISmdT2auKq7RRRkfgMG-9tHH0-Ni-jyav85eppP5SKc8a0elwEAKwyXPTakFE9pIgllRFpDjLAUCKUhpNC9BCIJ1jlPOMuBCMJlJIlgf3e-86-6zhsJA03pdqbW3tfZb5bRVp5PGLtWX2yiCiYxKFg03e4N33x2EVtU2GKgq3YDrgqI5prlMMyojKnao8S4ED-XhDsHqN3x1Gr7ahx8Xh8dfHtb-oo4A3QFRoFau800U_Gf9Acx_lg4</recordid><startdate>20230510</startdate><enddate>20230510</enddate><creator>Vihervaara, Anton</creator><creator>Hatanpää, Timo</creator><creator>Nieminen, Heta-Elisa</creator><creator>Mizohata, Kenichiro</creator><creator>Chundak, Mykhailo</creator><creator>Ritala, Mikko</creator><general>American Chemical Society</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-7593-5690</orcidid><orcidid>https://orcid.org/0000-0002-6210-2980</orcidid><orcidid>https://orcid.org/0000-0003-3745-8296</orcidid><orcidid>https://orcid.org/0000-0003-4417-1832</orcidid><orcidid>https://orcid.org/0000-0003-1361-3829</orcidid></search><sort><creationdate>20230510</creationdate><title>Reductive Thermal Atomic Layer Deposition Process for Gold</title><author>Vihervaara, Anton ; Hatanpää, Timo ; Nieminen, Heta-Elisa ; Mizohata, Kenichiro ; Chundak, Mykhailo ; Ritala, Mikko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a458t-f60e1dc5759cfa636ac7103dfde9084e1e4e77ca5fe6610a904538e5663787163</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vihervaara, Anton</creatorcontrib><creatorcontrib>Hatanpää, Timo</creatorcontrib><creatorcontrib>Nieminen, Heta-Elisa</creatorcontrib><creatorcontrib>Mizohata, Kenichiro</creatorcontrib><creatorcontrib>Chundak, Mykhailo</creatorcontrib><creatorcontrib>Ritala, Mikko</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>ACS Materials Au</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vihervaara, Anton</au><au>Hatanpää, Timo</au><au>Nieminen, Heta-Elisa</au><au>Mizohata, Kenichiro</au><au>Chundak, Mykhailo</au><au>Ritala, Mikko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reductive Thermal Atomic Layer Deposition Process for Gold</atitle><jtitle>ACS Materials Au</jtitle><addtitle>ACS Mater. Au</addtitle><date>2023-05-10</date><risdate>2023</risdate><volume>3</volume><issue>3</issue><spage>206</spage><epage>214</epage><pages>206-214</pages><issn>2694-2461</issn><eissn>2694-2461</eissn><abstract>In this work, we developed an atomic layer deposition (ALD) process for gold metal thin films from chloro­(triethylphosphine)­gold­(I) [AuCl­(PEt3)] and 1,4-bis­(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)2DHP]. High purity gold films were deposited on different substrate materials at 180 °C for the first time with thermal reductive ALD. The growth rate is 1.7 Å/cycle after the film reaches full coverage. The films have a very low resistivity close to the bulk value, and a minimal amount of impurities could be detected. The reaction mechanism of the process is studied in situ with a quartz crystal microbalance and a quadrupole mass spectrometer.</abstract><cop>United States</cop><pub>American Chemical Society</pub><pmid>38089133</pmid><doi>10.1021/acsmaterialsau.2c00075</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-7593-5690</orcidid><orcidid>https://orcid.org/0000-0002-6210-2980</orcidid><orcidid>https://orcid.org/0000-0003-3745-8296</orcidid><orcidid>https://orcid.org/0000-0003-4417-1832</orcidid><orcidid>https://orcid.org/0000-0003-1361-3829</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier ISSN: 2694-2461
ispartof ACS Materials Au, 2023-05, Vol.3 (3), p.206-214
issn 2694-2461
2694-2461
language eng
recordid cdi_pubmedcentral_primary_oai_pubmedcentral_nih_gov_10176613
source American Chemical Society (ACS) Open Access Journals
title Reductive Thermal Atomic Layer Deposition Process for Gold
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T08%3A56%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_N~.&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Reductive%20Thermal%20Atomic%20Layer%20Deposition%20Process%20for%20Gold&rft.jtitle=ACS%20Materials%20Au&rft.au=Vihervaara,%20Anton&rft.date=2023-05-10&rft.volume=3&rft.issue=3&rft.spage=206&rft.epage=214&rft.pages=206-214&rft.issn=2694-2461&rft.eissn=2694-2461&rft_id=info:doi/10.1021/acsmaterialsau.2c00075&rft_dat=%3Cproquest_N~.%3E2902974827%3C/proquest_N~.%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2902974827&rft_id=info:pmid/38089133&rfr_iscdi=true