Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiN x Stress-Engineered Technique

In this work, we present the novel application of SiN stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiN passivation signi...

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Veröffentlicht in:	Nanomaterials (Basel, Switzerland) Switzerland), 2024-11, Vol.14 (22)
Hauptverfasser:	Deng, Chenkai, Tang, Chuying, Wang, Peiran, Cheng, Wei-Chih, Du, Fangzhou, Wen, Kangyao, Zhang, Yi, Jiang, Yang, Tao, Nick, Wang, Qing, Yu, Hongyu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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