Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition
This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS films. We gradually increased the pulsed laser energy density from 70 mJ·cm to 110 mJ·cm and finally determined that 100 mJ·cm was the best-pulsed laser e...
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| Veröffentlicht in: | Micromachines (Basel) 2024-07, Vol.15 (8) |
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| container_title | Micromachines (Basel) |
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| creator | Cai, Wei Liu, Yuxiang Yao, Rihui Yuan, Weijian Ning, Honglong Huang, Yucheng Jin, Shaojie Fang, Xuecong Guo, Ruhai Peng, Junbiao |
| description | This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS
films. We gradually increased the pulsed laser energy density from 70 mJ·cm
to 110 mJ·cm
and finally determined that 100 mJ·cm
was the best-pulsed laser energy density for MoS
films by PLD. The surface morphology and crystallization of the MoS
films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS
phase with strong (002) preferential orientation, and their direct optical band gap (E
) is 1.614 eV. At the same time, the Si/MoS
heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0. |
| doi_str_mv | 10.3390/mi15080945 |
| format | Article |
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films. We gradually increased the pulsed laser energy density from 70 mJ·cm
to 110 mJ·cm
and finally determined that 100 mJ·cm
was the best-pulsed laser energy density for MoS
films by PLD. The surface morphology and crystallization of the MoS
films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS
phase with strong (002) preferential orientation, and their direct optical band gap (E
) is 1.614 eV. At the same time, the Si/MoS
heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.</description><identifier>ISSN: 2072-666X</identifier><identifier>EISSN: 2072-666X</identifier><identifier>DOI: 10.3390/mi15080945</identifier><identifier>PMID: 39203596</identifier><language>eng</language><publisher>Switzerland</publisher><ispartof>Micromachines (Basel), 2024-07, Vol.15 (8)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-1362-1784 ; 0000-0001-9518-5738</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,861,27905,27906</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/39203596$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Cai, Wei</creatorcontrib><creatorcontrib>Liu, Yuxiang</creatorcontrib><creatorcontrib>Yao, Rihui</creatorcontrib><creatorcontrib>Yuan, Weijian</creatorcontrib><creatorcontrib>Ning, Honglong</creatorcontrib><creatorcontrib>Huang, Yucheng</creatorcontrib><creatorcontrib>Jin, Shaojie</creatorcontrib><creatorcontrib>Fang, Xuecong</creatorcontrib><creatorcontrib>Guo, Ruhai</creatorcontrib><creatorcontrib>Peng, Junbiao</creatorcontrib><title>Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition</title><title>Micromachines (Basel)</title><addtitle>Micromachines (Basel)</addtitle><description>This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS
films. We gradually increased the pulsed laser energy density from 70 mJ·cm
to 110 mJ·cm
and finally determined that 100 mJ·cm
was the best-pulsed laser energy density for MoS
films by PLD. The surface morphology and crystallization of the MoS
films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS
phase with strong (002) preferential orientation, and their direct optical band gap (E
) is 1.614 eV. At the same time, the Si/MoS
heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.</description><issn>2072-666X</issn><issn>2072-666X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNqFjsFuwjAQRC0EAkS58AHV_kDAiUlSn4GoSCAitYfekCEbcIVjyzat0q-vD7RqT-xhdqTZN1pCJjGdMsbpTMk4pU-Uz9MOGSY0T6Isy966f_yAjJ17p2HynAfpkwHjCWUpz4bkc2e8VPJLeKkb0DWU14vDCjbCoYVVg_bUwhIbJ30LtbbgzwilRSPsL7LVL5BAIS8KRFPB2rtAfMgjwqH937dEo0NT4B5IrxYhGd_2iDwWq9fFc2SuB4XV3liphG33P5-yuwffPORQNQ</recordid><startdate>20240724</startdate><enddate>20240724</enddate><creator>Cai, Wei</creator><creator>Liu, Yuxiang</creator><creator>Yao, Rihui</creator><creator>Yuan, Weijian</creator><creator>Ning, Honglong</creator><creator>Huang, Yucheng</creator><creator>Jin, Shaojie</creator><creator>Fang, Xuecong</creator><creator>Guo, Ruhai</creator><creator>Peng, Junbiao</creator><scope>NPM</scope><orcidid>https://orcid.org/0000-0002-1362-1784</orcidid><orcidid>https://orcid.org/0000-0001-9518-5738</orcidid></search><sort><creationdate>20240724</creationdate><title>Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition</title><author>Cai, Wei ; Liu, Yuxiang ; Yao, Rihui ; Yuan, Weijian ; Ning, Honglong ; Huang, Yucheng ; Jin, Shaojie ; Fang, Xuecong ; Guo, Ruhai ; Peng, Junbiao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pubmed_primary_392035963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cai, Wei</creatorcontrib><creatorcontrib>Liu, Yuxiang</creatorcontrib><creatorcontrib>Yao, Rihui</creatorcontrib><creatorcontrib>Yuan, Weijian</creatorcontrib><creatorcontrib>Ning, Honglong</creatorcontrib><creatorcontrib>Huang, Yucheng</creatorcontrib><creatorcontrib>Jin, Shaojie</creatorcontrib><creatorcontrib>Fang, Xuecong</creatorcontrib><creatorcontrib>Guo, Ruhai</creatorcontrib><creatorcontrib>Peng, Junbiao</creatorcontrib><collection>PubMed</collection><jtitle>Micromachines (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cai, Wei</au><au>Liu, Yuxiang</au><au>Yao, Rihui</au><au>Yuan, Weijian</au><au>Ning, Honglong</au><au>Huang, Yucheng</au><au>Jin, Shaojie</au><au>Fang, Xuecong</au><au>Guo, Ruhai</au><au>Peng, Junbiao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition</atitle><jtitle>Micromachines (Basel)</jtitle><addtitle>Micromachines (Basel)</addtitle><date>2024-07-24</date><risdate>2024</risdate><volume>15</volume><issue>8</issue><issn>2072-666X</issn><eissn>2072-666X</eissn><abstract>This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS
films. We gradually increased the pulsed laser energy density from 70 mJ·cm
to 110 mJ·cm
and finally determined that 100 mJ·cm
was the best-pulsed laser energy density for MoS
films by PLD. The surface morphology and crystallization of the MoS
films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS
phase with strong (002) preferential orientation, and their direct optical band gap (E
) is 1.614 eV. At the same time, the Si/MoS
heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.</abstract><cop>Switzerland</cop><pmid>39203596</pmid><doi>10.3390/mi15080945</doi><orcidid>https://orcid.org/0000-0002-1362-1784</orcidid><orcidid>https://orcid.org/0000-0001-9518-5738</orcidid></addata></record> |
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| language | eng |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; MDPI - Multidisciplinary Digital Publishing Institute; PubMed Central |
| title | Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition |
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