Optimization of Pulsed Laser Energy Density for the Preparation of MoS 2 Film and Its Device by Pulsed Laser Deposition

This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS films. We gradually increased the pulsed laser energy density from 70 mJ·cm to 110 mJ·cm and finally determined that 100 mJ·cm was the best-pulsed laser energy density for MoS films by PLD. The surface morphology and crystallization of the MoS films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS phase with strong (002) preferential orientation, and their direct optical band gap (E ) is 1.614 eV. At the same time, the Si/MoS heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.