Study of defect density of copper vacancies in chalcogenide CuSbS 2 , CuSbSe 2 , CuBiS 2 , and CuBiSe 2 heterojunction thin-film solar cells

In the past decade, a new family of ternary chalcogenide absorber (TCA) materials M M X (where M = Cu, Ag, Pb; M = Sb, Bi, In; and X = S, Se, Te) have been studied. The copper family of ternary chalcogenide CuSbS CuSbSe CuBiS , and CuBiSe is an amazing absorber material for thin-film solar cells because of their suitable band gap, high absorption coefficient and inexpensive, nontoxic, environment friendly and sustainable nature. In the presented work, first time simulated defect density of copper vacancies in CuSbS (CAS), CuSbSe (CASe), CuBiS (CBS) and CuBiSe (CBSe) has based heterojunction thin-film solar cells (HJTFSCs) with buffer CdS, intrinsic i-ZnO, window ZnO: Al and back contact Mo and set the cell scheming ZnO: Al/i-ZnO/n-CdS/p-TCA/Mo using SCAPS 1D. Major focus of this paper is on the influence of copper vacancies defect density that impact on the performance of ternary chalcogenide with various parameters of solar cells, i.e. short-circuit current density (J ), open-circuit voltage (V ), form factor (FF) and efficiency (η). The cell parameter set at constant temperature 300 K, thickness 2.5 μm, carrier density 5 × 10 cm , front internal transmission coefficient 1 and illumination intensity 100 mW/cm with AM1.5 sun light. This study clarifies the potential benefits to utilizing of ternary chalcogenide compounds as absorber material for solar cell fabrication.