Demonstration of 10 nm Ferroelectric Al 0.7 Sc 0.3 N-Based Capacitors for Enabling Selector-Free Memory Array
In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al Sc N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm...
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Veröffentlicht in: | Materials 2024-01, Vol.17 (3) |
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Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al
Sc
N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm
and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of |
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ISSN: | 1996-1944 1996-1944 |
DOI: | 10.3390/ma17030627 |