Demonstration of 10 nm Ferroelectric Al 0.7 Sc 0.3 N-Based Capacitors for Enabling Selector-Free Memory Array

In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al Sc N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm...

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Veröffentlicht in:Materials 2024-01, Vol.17 (3)
Hauptverfasser: Chen, Li, Liu, Chen, Lee, Hock Koon, Varghese, Binni, Ip, Ronald Wing Fai, Li, Minghua, Quek, Zhan Jiang, Hong, Yan, Wang, Weijie, Song, Wendong, Lin, Huamao, Zhu, Yao
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Sprache:eng
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Zusammenfassung:In this work, 10 nm scandium-doped aluminum nitride (AlScN) capacitors are demonstrated for the construction of the selector-free memory array application. The 10 nm Al Sc N film deposited on an 8-inch silicon wafer with sputtering technology exhibits a large remnant polarization exceeding 100 µC/cm and a tight distribution of the coercive field, which is characterized by the positive-up-negative-down (PUND) method. As a result, the devices with lateral dimension of only 1.5 μm show a large memory window of over 250% and a low power consumption of ~40 pJ while maintaining a low disturbance rate of
ISSN:1996-1944
1996-1944
DOI:10.3390/ma17030627