Improved V th Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O 2 Plasma Treatment

The stability and gate reliability of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al O /AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al O with the alternating O plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O plasma treatment demonstrated remarkable advantages in higher stability under high-temperature and long-term gate bias stress.