Evidence of the fractional quantum spin Hall effect in moiré MoTe 2

Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities . So far, experimental studies have found only integer QSH insulators with counter-propa...

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Veröffentlicht in:Nature (London) 2024-03
Hauptverfasser: Kang, Kaifei, Shen, Bowen, Qiu, Yichen, Zeng, Yihang, Xia, Zhengchao, Watanabe, Kenji, Taniguchi, Takashi, Shan, Jie, Mak, Kin Fai
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Sprache:eng
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Zusammenfassung:Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities . So far, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G  = e /h (with e and h denoting the electron charge and Planck's constant, respectively) . Here we report transport evidence of a fractional QSH insulator in 2.1° twisted bilayer MoTe , which supports spin-S conservation and flat spin-contrasting Chern bands . At filling factor ν = 3 of the moiré valence bands, each edge contributes a conductance with zero anomalous Hall conductivity. The state is probably a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Furthermore, at ν = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G , 2G and 3G , respectively. Our results open up the possibility of realizing time-reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials .
ISSN:1476-4687
DOI:10.1038/s41586-024-07214-5