Evidence of the fractional quantum spin Hall effect in moiré MoTe 2
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities . So far, experimental studies have found only integer QSH insulators with counter-propa...
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Veröffentlicht in: | Nature (London) 2024-03 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap similar to an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities
. So far, experimental studies have found only integer QSH insulators with counter-propagating up-spins and down-spins at each edge leading to a quantized conductance G
= e
/h (with e and h denoting the electron charge and Planck's constant, respectively)
. Here we report transport evidence of a fractional QSH insulator in 2.1° twisted bilayer MoTe
, which supports spin-S
conservation and flat spin-contrasting Chern bands
. At filling factor ν = 3 of the moiré valence bands, each edge contributes a conductance
with zero anomalous Hall conductivity. The state is probably a time-reversal pair of the even-denominator 3/2-fractional Chern insulators. Furthermore, at ν = 2, 4 and 6, we observe a single, double and triple QSH insulator with each edge contributing a conductance G
, 2G
and 3G
, respectively. Our results open up the possibility of realizing time-reversal symmetric non-abelian anyons and other unexpected topological phases in highly tunable moiré materials
. |
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ISSN: | 1476-4687 |
DOI: | 10.1038/s41586-024-07214-5 |