ARPES investigation of the electronic structure and its evolution in magnetic topological insulator MnBi 2+2 n Te 4+3 n family

In the past 5 years, there has been significant research interest in the intrinsic magnetic topological insulator family compounds MnBi Te (where = 0, 1, 2 …). In particular, exfoliated thin films of MnBi Te have led to numerous experimental breakthroughs, such as the quantum anomalous Hall effect, axion insulator phase and high-Chern number quantum Hall effect without Landau levels. However, despite extensive efforts, the energy gap of the topological surface states due to exchange magnetic coupling, which is a key feature of the characteristic band structure of the system, remains experimentally elusive. The electronic structure measured by using angle-resolved photoemission (ARPES) shows significant deviation from prediction and scanning tunneling spectroscopy measurements, making it challenging to understand the transport results based on the electronic structure. This paper reviews the measurements of the band structure of MnBi Te magnetic topological insulators using ARPES, focusing on the evolution of their electronic structures with temperature, surface and bulk doping and film thickness. The aim of the review is to construct a unified picture of the electronic structure of MnBi Te compounds and explore possible control of their topological properties.