Green to deep-red emissive carbon dot formation by C+ ion implantation on nitrogen beam created self-masked nano-template

We report the formation of green to red emissive arrays of carbon dot on silicon-nitride nano-templates by successive implantation of nitrogen and carbon broad ion beams. The patterned nano-templates are formed by 14 keV N ion-bombardment at grazing incident (70°) on Si. Subsequently, 5 keV C ions a...

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Veröffentlicht in:	Nanotechnology 2024-03, Vol.35 (12), p.125301
Hauptverfasser:	Bhowmick, Sudip, Mukherjee, Joy, Ghosal, Manorama, Nayak, Chumki, Satpati, Biswarup, Pramanik, Goutam, Karmakar, Prasanta
Format:	Artikel
Sprache:	eng
Schlagworte:	carbon dot graphitic nitrogen ion implantation redshifted photoluminescence silicon-nitride nano-pyramid
Online-Zugang:	Volltext
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