Flat-Band Potential Determination and Catalytical Properties of Sn 3 O 4 /SnO 2 Heterostructures in the Photo-Electrooxidation of Small Organic Molecules under Ultraviolet (370 nm) and Blue (450 nm) Light
Sn O are promising semiconductor materials due to their visible light absorption ability. In this work, a series of materials, such as SnO , Sn O and Sn O /SnO heterostructures, with different phase ratios were prepared using hydrothermal synthesis. The materials were characterized using X-ray diffr...
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Veröffentlicht in: | Materials 2023-11, Vol.16 (23) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | Sn
O
are promising semiconductor materials due to their visible light absorption ability. In this work, a series of materials, such as SnO
, Sn
O
and Sn
O
/SnO
heterostructures, with different phase ratios were prepared using hydrothermal synthesis. The materials were characterized using X-ray diffraction (XRD), Raman and diffuse reflectance spectroscopy (DRS), high resolution transmission electron microscopy (HRTEM), nitrogen adsorption (BET). Flat-band potentials (E
) of the samples were determined using the photocurrent onset potential (POP) method. It was shown that the potentials obtained with open circuit potential measurements versus illumination intensity (OCP) likely corresponded to the E
of SnO
nanoparticles in heterostructures due to interfacial electron transfer from the conducting band of Sn
O
to that of SnO
. The photo-electrooxidation processes of a series of organic substrates were studied in the potential range of 0.6-1.4 V vs. RHE under irradiation with ultraviolet (λ = 370 nm) and visible (λ = 450 nm) light. The Sn
O
sample showed high activity in the photo-electrooxidation of acetone and formic acid in visible light. The Sn
O
/SnO
samples exhibited noticeable activity only in the oxidation of formic acid. The presence of the SnO
phase in the Sn
O
/SnO
samples increased the photocurrent values under ultraviolet illumination, but significantly reduced the oxidation efficiency in visible light. |
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ISSN: | 1996-1944 1996-1944 |