Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes

Nowadays, strained quantum structures have been widely used in various light-emitting devices with a variety of compounds for progressive applications. However, the lattice-mismatch-induced strains in the materials would cause a problem of polarization dependence for polarization-independent optical...

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Veröffentlicht in:Nanoscale 2023-11, Vol.15 (44), p.1844-1852
Hauptverfasser: Wang, Yuhong, Tai, Hanxu, Duan, Ruonan, Zheng, Ming, Shi, Yue, Zhang, Jianwei, Zhang, Xing, Ning, Yongqiang, Wu, Jian
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Sprache:eng
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Zusammenfassung:Nowadays, strained quantum structures have been widely used in various light-emitting devices with a variety of compounds for progressive applications. However, the lattice-mismatch-induced strains in the materials would cause a problem of polarization dependence for polarization-independent optical applications. To address this issue, in this paper we propose a novel ultra-broadband depolarization mechanism and approach based on a directly-coupled well-wire-hybrid nanostructure. It contains quantum wire-to-well modulation and their aliasing effects on strain, energy-band structure and optical gain to obtain independent and comparable bipolarization of optical signals. The material structure involves a special well and on-well quantum wires with gradually-changing band-gaps, which are formed by utilizing the indium (In)-segregation effect and the growth-orientation-dependent multi-atomic step effect. With this special hybrid nanostructure, the depolarization efficiency can be 95% higher than that of a single compressive-strained quantum well. A low polarization degree of 0.05 and a very small gain difference of | G TE − G TM | < 1.3 cm −1 in different polarizations are achieved over a very broad gain bandwidth (870-950 nm) for an InGaAs material system. Therefore, this is a new chance for the development of ultra-broadband and polarization-insensitive optical applications. A new ultra-broadband depolarization mechanism is proposed, which can solve the polarization-dependence problem in strained quantum structures for polarization-insensitive light-emitting diode applications.
ISSN:2040-3364
2040-3372
DOI:10.1039/d3nr04423h