Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition
ZnO based transparent conducting oxides are important as they provide an alternative to the more expensive Sn : In 2 O 3 that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown via aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc ace...
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| Veröffentlicht in: | RSC advances 2022-11, Vol.12 (51), p.3349-3355 |
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| creator | Zhao, Donglei Sathasivam, Sanjayan Wang, Mingyue Carmalt, Claire J |
| description | ZnO based transparent conducting oxides are important as they provide an alternative to the more expensive Sn : In
2
O
3
that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown
via
aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc acetate and triethylborane using either tetrahydrofuran or methanol (MeOH) as the solvent. The lowest resistivity of 5.1 × 10
−3
Ω cm along with a visible light transmittance of ∼75-80% was achieved when using MeOH as the solvent. XRD analysis only detected the wurtzite phase of ZnO suggesting successful solid solution formation with B
3+
substituting Zn
2+
sites in the lattice. Refinement of the XRD patterns showed minimal distortion to the ZnO unit cell upon doping when MeOH was the solvent due to the immiscibility of the [BEt
3
] solution (1.0 M solution in hexane) in methanol that limited the amount of B going into the films, thus preventing excessive doping.
Boron doped zinc oxide thin films
via
aerosol assisted chemical vapor deposition with resisitivities as low as 5.1 × 10
−3
Ω cm. |
| doi_str_mv | 10.1039/d2ra05895b |
| format | Article |
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2
O
3
that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown
via
aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc acetate and triethylborane using either tetrahydrofuran or methanol (MeOH) as the solvent. The lowest resistivity of 5.1 × 10
−3
Ω cm along with a visible light transmittance of ∼75-80% was achieved when using MeOH as the solvent. XRD analysis only detected the wurtzite phase of ZnO suggesting successful solid solution formation with B
3+
substituting Zn
2+
sites in the lattice. Refinement of the XRD patterns showed minimal distortion to the ZnO unit cell upon doping when MeOH was the solvent due to the immiscibility of the [BEt
3
] solution (1.0 M solution in hexane) in methanol that limited the amount of B going into the films, thus preventing excessive doping.
Boron doped zinc oxide thin films
via
aerosol assisted chemical vapor deposition with resisitivities as low as 5.1 × 10
−3
Ω cm.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/d2ra05895b</identifier><identifier>PMID: 36425205</identifier><language>eng</language><publisher>England: Royal Society of Chemistry</publisher><subject>Chemical vapor deposition ; Chemistry ; Doping ; Hexanes ; Indium oxides ; Light transmittance ; Methanol ; Miscibility ; Solid solutions ; Solvents ; Tetrahydrofuran ; Thin films ; Unit cell ; Wurtzite ; X-ray diffraction ; Zinc acetate ; Zinc oxide</subject><ispartof>RSC advances, 2022-11, Vol.12 (51), p.3349-3355</ispartof><rights>This journal is © The Royal Society of Chemistry.</rights><rights>Copyright Royal Society of Chemistry 2022</rights><rights>This journal is © The Royal Society of Chemistry 2022 The Royal Society of Chemistry</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c358t-5ad4df0ef526008237b78cb88a822818e023a483120cf1fff91227ea98516d513</citedby><cites>FETCH-LOGICAL-c358t-5ad4df0ef526008237b78cb88a822818e023a483120cf1fff91227ea98516d513</cites><orcidid>0000-0002-5206-9558 ; 0000-0003-1788-6971</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9671099/pdf/$$EPDF$$P50$$Gpubmedcentral$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.ncbi.nlm.nih.gov/pmc/articles/PMC9671099/$$EHTML$$P50$$Gpubmedcentral$$Hfree_for_read</linktohtml><link.rule.ids>230,314,724,777,781,861,882,27905,27906,53772,53774</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36425205$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Zhao, Donglei</creatorcontrib><creatorcontrib>Sathasivam, Sanjayan</creatorcontrib><creatorcontrib>Wang, Mingyue</creatorcontrib><creatorcontrib>Carmalt, Claire J</creatorcontrib><title>Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition</title><title>RSC advances</title><addtitle>RSC Adv</addtitle><description>ZnO based transparent conducting oxides are important as they provide an alternative to the more expensive Sn : In
2
O
3
that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown
via
aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc acetate and triethylborane using either tetrahydrofuran or methanol (MeOH) as the solvent. The lowest resistivity of 5.1 × 10
−3
Ω cm along with a visible light transmittance of ∼75-80% was achieved when using MeOH as the solvent. XRD analysis only detected the wurtzite phase of ZnO suggesting successful solid solution formation with B
3+
substituting Zn
2+
sites in the lattice. Refinement of the XRD patterns showed minimal distortion to the ZnO unit cell upon doping when MeOH was the solvent due to the immiscibility of the [BEt
3
] solution (1.0 M solution in hexane) in methanol that limited the amount of B going into the films, thus preventing excessive doping.
Boron doped zinc oxide thin films
via
aerosol assisted chemical vapor deposition with resisitivities as low as 5.1 × 10
−3
Ω cm.</description><subject>Chemical vapor deposition</subject><subject>Chemistry</subject><subject>Doping</subject><subject>Hexanes</subject><subject>Indium oxides</subject><subject>Light transmittance</subject><subject>Methanol</subject><subject>Miscibility</subject><subject>Solid solutions</subject><subject>Solvents</subject><subject>Tetrahydrofuran</subject><subject>Thin films</subject><subject>Unit cell</subject><subject>Wurtzite</subject><subject>X-ray diffraction</subject><subject>Zinc acetate</subject><subject>Zinc oxide</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNpdks9rFTEQx4NYbKm9eFcCXqTwNJlsdpOL0NaqhUJB6sVLyObHeym7yZrsVvrfm_rqs3YuMzAfvszMdxB6Rcl7Spj8YCFrwoXk_TN0AKRpV0Ba-fxRvY-OSrkhNVpOoaUv0D5rG-BA-AEK11nHMuns4ox1tNikaBczh7jGfcopYpsmZ_GPeIXnTYjYh2EseJ3Tr4j7O6xdTiUNWJcSylxBs3FjMHrAt3pKGVs3pRLmkOJLtOf1UNzRQz5E3z-fX599XV1efbk4O7lcGcbFvOLaNtYT5zm0hAhgXd8J0wuhBYCgwhFguhGMAjGeeu8lBeicloLT1nLKDtHHre609KOzpi6W9aCmHEad71TSQf3fiWGj1ulWybajRMoq8O5BIKefiyuzGkMxbhh0dGkpCrqGcFLPJyr69gl6k5Yc63qVYrIBKjpeqeMtZeqtSnZ-Nwwl6t5E9Qm-nfwx8bTCbx6Pv0P_WlaB11sgF7Pr_vsC9hvYOaIS</recordid><startdate>20221115</startdate><enddate>20221115</enddate><creator>Zhao, Donglei</creator><creator>Sathasivam, Sanjayan</creator><creator>Wang, Mingyue</creator><creator>Carmalt, Claire J</creator><general>Royal Society of Chemistry</general><general>The Royal Society of Chemistry</general><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>7X8</scope><scope>5PM</scope><orcidid>https://orcid.org/0000-0002-5206-9558</orcidid><orcidid>https://orcid.org/0000-0003-1788-6971</orcidid></search><sort><creationdate>20221115</creationdate><title>Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition</title><author>Zhao, Donglei ; Sathasivam, Sanjayan ; Wang, Mingyue ; Carmalt, Claire J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c358t-5ad4df0ef526008237b78cb88a822818e023a483120cf1fff91227ea98516d513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Chemical vapor deposition</topic><topic>Chemistry</topic><topic>Doping</topic><topic>Hexanes</topic><topic>Indium oxides</topic><topic>Light transmittance</topic><topic>Methanol</topic><topic>Miscibility</topic><topic>Solid solutions</topic><topic>Solvents</topic><topic>Tetrahydrofuran</topic><topic>Thin films</topic><topic>Unit cell</topic><topic>Wurtzite</topic><topic>X-ray diffraction</topic><topic>Zinc acetate</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Donglei</creatorcontrib><creatorcontrib>Sathasivam, Sanjayan</creatorcontrib><creatorcontrib>Wang, Mingyue</creatorcontrib><creatorcontrib>Carmalt, Claire J</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>MEDLINE - Academic</collection><collection>PubMed Central (Full Participant titles)</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Donglei</au><au>Sathasivam, Sanjayan</au><au>Wang, Mingyue</au><au>Carmalt, Claire J</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition</atitle><jtitle>RSC advances</jtitle><addtitle>RSC Adv</addtitle><date>2022-11-15</date><risdate>2022</risdate><volume>12</volume><issue>51</issue><spage>3349</spage><epage>3355</epage><pages>3349-3355</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>ZnO based transparent conducting oxides are important as they provide an alternative to the more expensive Sn : In
2
O
3
that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown
via
aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc acetate and triethylborane using either tetrahydrofuran or methanol (MeOH) as the solvent. The lowest resistivity of 5.1 × 10
−3
Ω cm along with a visible light transmittance of ∼75-80% was achieved when using MeOH as the solvent. XRD analysis only detected the wurtzite phase of ZnO suggesting successful solid solution formation with B
3+
substituting Zn
2+
sites in the lattice. Refinement of the XRD patterns showed minimal distortion to the ZnO unit cell upon doping when MeOH was the solvent due to the immiscibility of the [BEt
3
] solution (1.0 M solution in hexane) in methanol that limited the amount of B going into the films, thus preventing excessive doping.
Boron doped zinc oxide thin films
via
aerosol assisted chemical vapor deposition with resisitivities as low as 5.1 × 10
−3
Ω cm.</abstract><cop>England</cop><pub>Royal Society of Chemistry</pub><pmid>36425205</pmid><doi>10.1039/d2ra05895b</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0002-5206-9558</orcidid><orcidid>https://orcid.org/0000-0003-1788-6971</orcidid><oa>free_for_read</oa></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; PubMed Central Open Access; PubMed Central |
| subjects | Chemical vapor deposition Chemistry Doping Hexanes Indium oxides Light transmittance Methanol Miscibility Solid solutions Solvents Tetrahydrofuran Thin films Unit cell Wurtzite X-ray diffraction Zinc acetate Zinc oxide |
| title | Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition |
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