State of the art of ultra-thin gold layers: formation fundamentals and applications

Fabrication of ultra-thin gold (Au) layers (UTGLs) has been regarded as the key technique to achieve applications with tunable optical response, flexible sensors and electronic devices. Various strategies have been developed to optimize the wetting process of Au, resulting in the formation of UTGLs...

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Veröffentlicht in:Nanoscale advances 2022-06, Vol.4 (12), p.2533-256
Hauptverfasser: Liang, Suzhe, Schwartzkopf, Matthias, Roth, Stephan V, Müller-Buschbaum, Peter
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Sprache:eng
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Zusammenfassung:Fabrication of ultra-thin gold (Au) layers (UTGLs) has been regarded as the key technique to achieve applications with tunable optical response, flexible sensors and electronic devices. Various strategies have been developed to optimize the wetting process of Au, resulting in the formation of UTGLs at a minimum thickness. The related studies on UTGLs attracted huge attention in recent years. On the one hand, the growth processes of UTGLs on different substrates were in-depth probed by advanced in situ characterization techniques and the effects of optimization strategies on the growth of UTGLs were also revealed. On the other hand, based on the understanding of the growth behavior and the assistance of optimization strategies, various applications of UTGLs were realized based on optical/plasmon responses, surface-enhanced Raman scattering and as electrodes for various sensors and electronic devices, as well as being seed layers for thin film growth. In this focused review, both the fundamental and practical studies on UTGLs in the most recent years are elaborated in detail. The growth processes of UTGLs revealed by in situ characterization techniques, such as grazing-incidence small-angle X-ray scattering (GISAXS), as well as the state of the art of UTGL-based applications, are reviewed. The insights into the formation of ultra-thin gold layers on solid, soft, and nanostructured substrates, as well as the corresponding applications in optical response, electronic device, and as seed layers are reviewed.
ISSN:2516-0230
2516-0230
DOI:10.1039/d2na00127f