Iron Single Atoms Anchored on Carbon Matrix/g-C 3 N 4 Hybrid Supports by Single-Atom Migration-Trapping Based on MOF Pyrolysis

Numerous efforts have been devoted to realizing the high loading and full utilization of single-atom catalysts (SACs). As one of the representative methods, atom migration-trapping (AMT) is a top-down strategy that converts a certain volume of metal nanoparticles (NPs) or metal-based precursors into...

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Veröffentlicht in:Nanomaterials (Basel, Switzerland) Switzerland), 2022-04, Vol.12 (9)
Hauptverfasser: Jia, Yining, Huang, Rong, Qi, Ruijuan
Format: Artikel
Sprache:eng
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Zusammenfassung:Numerous efforts have been devoted to realizing the high loading and full utilization of single-atom catalysts (SACs). As one of the representative methods, atom migration-trapping (AMT) is a top-down strategy that converts a certain volume of metal nanoparticles (NPs) or metal-based precursors into mobile metal species at high temperature, which can then be trapped by suitable supports. In this study, high-loading iron single atoms anchored onto carbon matrix/g-C N hybrid supports were obtained through a single-atom migration-trapping method based on metal-organic framework (MOF) pyrolysis. It is confirmed, by high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM), X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS), that the Fe(acac) precursor is reduced to Fe single atoms (SAs), which are not only anchored onto the original N-doped carbon (NC), but also onto g-C N , with an Fe-N coordination bond. Further electrochemical results reveal that Fe-C N -0.075 possesses a better half-wave potential of 0.846 V and onset potential of 0.96 V compared to Fe-N-C, the product obtained after pyrolysis of Fe(acac) @ZIF-8. As opposed to SAs prepared by the pyrolysis process only, SAs prepared by AMT are commonly anchored onto the surface of the supports, which is a simple and effective way to make full use of the source metal and prepare SACs with higher exposing active sites.
ISSN:2079-4991
2079-4991