Carrier Recombination Processes in GaAs Wafer Passivated by Wet Nitridation

As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump - THz probe measurements we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole and electron trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes GaAs surface via reduction of both electron and hole trapping rates, which results in chemical and electronical passivation of bulk GaAs surface.