Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact

Reduced graphene oxide-silicon interface involving direct Si-O bonding as a conductive and mechanical stable ohmic contact

Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of

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Bibliographische Detailangaben
Veröffentlicht in:Chemical communications (Cambridge, England) England), 2020-06, Vol.56 (46), p.629-6212
Hauptverfasser: Rahpeima, Soraya, Dief, Essam M, Peiris, Chandramalika R, Ferrie, Stuart, Duan, Alex, Ciampi, Simone, Raston, Colin L, Darwish, Nadim
Format: Artikel
Sprache:eng
Schlagworte:
Bonding
Chemical reduction
Contact resistance
Graphene
Low resistance
Monolayers
Platinum
Semiconductor devices
Semiconductor junctions
Silicon
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Beschreibung
Zusammenfassung:Metal-semiconductor junctions are essential contacts for semiconductor devices, but high contact junction resistance is a limiting operational factor. Here, we establish an ohmic contact of low resistance of
ISSN:1359-7345
1364-548X
DOI:10.1039/d0cc02310h