Extraction of source functions of surface photovoltage transients at very short times
The measurement of surface photovoltage (SPV) transients over 12 orders of magnitude in time was recently demonstrated [Rev. Sci. Instrum. 88, 053904 (2017)]. In dedicated experiments, however, a high-impedance buffer shall be placed outside the measurement chamber, which has consequences for SPV me...
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Veröffentlicht in: | Review of scientific instruments 2019-02, Vol.90 (2), p.026102-026102 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The measurement of surface photovoltage (SPV) transients over 12 orders of magnitude in time was recently demonstrated [Rev. Sci. Instrum. 88, 053904 (2017)]. In dedicated experiments, however, a high-impedance buffer shall be placed outside the measurement chamber, which has consequences for SPV measurements at very short times. By varying the LCR circuit of a measurement configuration, applying a multi-parameter fit and simulating the corresponding SPV transients, we show, on the examples of highly doped silicon and a CdS thin film, that the source function of SPV transients can be reconstructed with a resolution time better than 1 ns. |
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ISSN: | 0034-6748 1089-7623 |
DOI: | 10.1063/1.5068749 |