Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unalte...

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Veröffentlicht in:Review of scientific instruments 2019-01, Vol.90 (1), p.014708-014708
Hauptverfasser: McCrory, Duane J., Anders, Mark A., Ryan, Jason T., Shrestha, Pragya R., Cheung, Kin P., Lenahan, Patrick M., Campbell, Jason P.
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Sprache:eng
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Zusammenfassung:We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows EDMR measurements to be performed on an unaltered, fully processed semiconductor wafer. Our measurements replace the conventional EPR microwave cavity or resonator with a very small non-resonant near-field microwave probe. Bipolar amplification effect, spin dependent charge pumping, and spatially resolved EDMR are demonstrated on various planar 4H-silicon carbide metal-oxide-semiconductor field-effect transistor (4H-SiC MOSFET) structures. 4H-SiC is a wide bandgap semiconductor and the leading polytype for high-temperature and high-power MOSFET applications. These measurements are made via both “rapid scan” frequency-swept EDMR and “slow scan” frequency swept EDMR. The elimination of the resonance cavity and incorporation with a wafer probing station greatly simplifies the EDMR detection scheme and offers promise for widespread EDMR adoption in semiconductor reliability laboratories.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.5053665