Synthesis, Giant Dielectric, and Pyroelectric Response of [001]-Oriented Pr 3+ Doped Pb(Mg 1/3 Nb 2/3 )O₃-PbTiO₃ Ferroelectric Nano-Films Grown on Si Substrates
The [001]-oriented Pr doped Pb(Mg Nb )O₃-0.30PbTiO₃ (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol⁻gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in...
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Veröffentlicht in: | Materials 2018-11, Vol.11 (12) |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The [001]-oriented Pr
doped Pb(Mg
Nb
)O₃-0.30PbTiO₃ (Pr-PMN-PT) thin films with a composition near the morphotropic phase boundary (MPB) were synthesized by a sol⁻gel method. The crystal structure was characterized using X-ray diffraction. It was found that a single perovskite phase was achieved in Pr-PMN-PT thin films annealed at 650 °C for 3 min. The dielectric constant (
) value was 2400 in 2.5% Pr-PMN-PT thin films at room temperature, 110% higher than that of pure PMN-PT samples. Through 2.5% Pr
doping, remanent polarization (
) and coercive field (
) values increased from 11.5 μC/cm² and 35 kV/cm to 17.3 μC/cm² and 63.5 kV/cm, respectively, in PMN-PT thin films. The leakage current densities of pure and 2.5% Pr-PMN-PT thin films were on the order of 1.24 × 10
A/cm² and 5.8 × 10
A/cm², respectively, at 100 kV/cm. A high pyroelectric coefficient (
) with a value of 167 μC/m²K was obtained in 2.5% Pr-PMN-PT thin films on Si substrate, which makes this material suitable for application in infrared detectors. |
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ISSN: | 1996-1944 1996-1944 |