Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VO x ) into porous silicon. A stable specific capacitance above 20 F g −1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VO x coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Silicon based integrated transient energy storage designed with porous silicon and atomic layer deposition enables ultrafast disablement and eventual full dissolution of on-board energy storage material.