Liquid-solid spinodal decomposition mediated synthesis of Sb₂Se₃ nanowires and their photoelectric behavior

The convenient synthesis of one-dimensional nanostructures of chalcogenide compounds with a visible band-gap is an essential research topic in developing next-generation photoelectronic devices. In particular, the design of a theoretically predictable synthesis process provides great flexibility and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanoscale 2015-08, Vol.7 (30), p.12913
Hauptverfasser: Kwon, Yong Hun, Jeong, Myoungho, Do, Hyun Woo, Lee, Jeong Yong, Cho, Hyung Koun
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The convenient synthesis of one-dimensional nanostructures of chalcogenide compounds with a visible band-gap is an essential research topic in developing next-generation photoelectronic devices. In particular, the design of a theoretically predictable synthesis process provides great flexibility and has a considerable ripple effect in nanotechnology. In this study, a novel rational growth approach is designed using the spinodal decomposition phenomenon for the synthesis of the Sb2Se3 nanowires, which is based on the thermodynamic phase diagram. Using a stacked elemental layer (Sb/Sb-Se/Se) and heat treatment at 623 K for 30 min under an N2 atmosphere, the vertically inclined one-dimensional nanostructures are experimentally demonstrated. An additional annealing process at 523 K in a vacuum effectively removed excess Se elements due to their high vapor pressure, resulting in highly dense single crystal Sb2Se3 nanowire arrays. Adaption of our synthesis approach enables significantly improved photocurrent generation in the vertically stacked structure (glass/ITO/Sb2Se3 nanowires/ITO/PEN) from 6.4 (dark) to under 690 μA (at 3 V under AM 1.5G). In addition, a photoelectrochemical test demonstrated their p-type conductivity and robust photocorrosion performance in 0.5 M H2SO4.
ISSN:2040-3372
DOI:10.1039/c5nr03461b