Nucleation kinetics of SrTiO3 3D islands and nanorings on Si substrates
The nucleation of SrTiO 3 three-dimensional (3D) islands and nanorings on Si substrates via a novel metalorganic decomposition (MOD) process has been investigated as a function of temperature and solution concentration of the SrTi(OC 3 H 7 ) 6 precursor. Quantitative analysis of island density and s...
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Veröffentlicht in: | Nanoscale 2014-11, Vol.6 (21), p.13188-13195 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The nucleation of SrTiO
3
three-dimensional (3D) islands and nanorings on Si substrates
via
a novel metalorganic decomposition (MOD) process has been investigated as a function of temperature and solution concentration of the SrTi(OC
3
H
7
)
6
precursor. Quantitative analysis of island density and size distribution by atomic force microscopy (AFM) has revealed the existence of a nucleation regime at solution concentrations below 5 × 10
−3
M, in which the critical nucleus is a trimer and a coalescence regime at higher concentrations, dominated by growth of immobile clusters. Nanorings form preferentially under high supersaturation conditions and their size distribution is consistent with a dynamic coalescence. On the basis of recent theoretical models (Gill, 2012), we have proposed that the island-to-nanoring transition in the SrTiO
3
/Si system occurs above a critical size as a result of a competition between energetic and kinetic factors. The combination of high-resolution transmission electron microscopy (HRTEM) and attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) has shown that the monocrystalline SrTiO
3
nanoclusters grow pseudomorphically on the Si substrate and exhibit a strain-induced tetragonal lattice distortion.
The nucleation of SrTiO
3
three-dimensional (3D) islands and nanorings on Si substrates
via
a novel metalorganic decomposition (MOD) process has been investigated as a function of temperature and solution concentration of the SrTi(OC
3
H
7
)
6
precursor. |
---|---|
ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c4nr04416a |