Oxygen etching of thick MoS2 films
Oxygen annealing of thick MoS 2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in diff...
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| Veröffentlicht in: | Chemical communications (Cambridge, England) England), 2014-10, Vol.5 (76), p.11226-11229 |
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| container_issue | 76 |
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| container_title | Chemical communications (Cambridge, England) |
| container_volume | 5 |
| creator | Ionescu, Robert George, Aaron Ruiz, Isaac Favors, Zachary Mutlu, Zafer Liu, Chueh Ahmed, Kazi Wu, Ryan Jeong, Jong S Zavala, Lauro Mkhoyan, K. Andre Ozkan, Mihri Ozkan, Cengiz S |
| description | Oxygen annealing of thick MoS
2
films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
Oxygen annealing of thick MoS
2
films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. |
| doi_str_mv | 10.1039/c4cc03911d |
| format | Article |
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2
films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
Oxygen annealing of thick MoS
2
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films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
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2
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2
films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses.
Oxygen annealing of thick MoS
2
films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles.</abstract><cop>England</cop><pmid>25116379</pmid><doi>10.1039/c4cc03911d</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1359-7345 |
| ispartof | Chemical communications (Cambridge, England), 2014-10, Vol.5 (76), p.11226-11229 |
| issn | 1359-7345 1364-548X |
| language | eng |
| recordid | cdi_pubmed_primary_25116379 |
| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| title | Oxygen etching of thick MoS2 films |
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