Oxygen etching of thick MoS2 films

Oxygen annealing of thick MoS 2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles. These etching morphologies differ across the sample based on the defect sites situated on the basal plane surface, forming numerous features in different bulk sample thicknesses. Oxygen annealing of thick MoS 2 films results in randomly oriented and controllable triangular etched shapes, forming pits with uniform etching angles.