Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching
The electrical resistance switching (RS) properties of amorphous HfO 2 (a-HfO 2 ) and crystalline HfO 2 (c-HfO 2 ) thin films grown on a TiN substrate via atomic layer deposition were examined using DC current-voltage ( I - V ) sweep and AC impedance spectroscopic (IS) analyses. The rapid thermal an...
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| Veröffentlicht in: | Nanoscale 2014-06, Vol.6 (12), p.6668-6678 |
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| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The electrical resistance switching (RS) properties of amorphous HfO
2
(a-HfO
2
) and crystalline HfO
2
(c-HfO
2
) thin films grown on a TiN substrate
via
atomic layer deposition were examined using DC current-voltage (
I
-
V
) sweep and AC impedance spectroscopic (IS) analyses. The rapid thermal annealing of the a-HfO
2
film at 500 °C under a N
2
atmosphere for 5 min crystallized the HfO
2
film and induced an interfacial TiON barrier layer. The a-HfO
2
sample showed fluent bipolar RS performance with a high on/off ratio (∼500), whereas the c-HfO
2
sample showed a much lower on/off ratio ( |
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| ISSN: | 2040-3364 2040-3372 |
| DOI: | 10.1039/c4nr00507d |