Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires

Li doped NiO nanowires with a diameter smaller than 100 nm were synthesized by electrospinning. The nanowires exhibit p-type characteristics with improved electrical conductivity through Li doping. Moreover, an enhanced gating effect was obtained in Li-NiO-nanowire-based field effect transistors (FETs), which hold great potential in transparent optoelectronics. Improved electrical conductivity and p-type field effect transistors with an enhanced gating effect are realized with Li-doped NiO nanowires via a facile electrospinning technique.