Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metal–Organic Chemical Vapor Deposition

We characterize nanostructures of Bi2Se3 that are grown via metal–organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocalization and extract a phase coherence length l ϕ = 178 nm and spin–orbit length l so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.