Anisotropic magnetoresistance in manganites: experiment and theory

We present measurements of the anisotropic magnetoresistance (AMR) of La(0.75)Sr(0.25)MnO(3) films deposited on (001) SrTiO(3) substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts...

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Veröffentlicht in:	Journal of physics. Condensed matter 2010-04, Vol.22 (14), p.146001-146001
Hauptverfasser:	Fuhr, J D, Granada, M, Steren, L B, Alascio, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Anisotropy Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystal structure Deposition Exact sciences and technology Magnetic properties and materials Magnetoresistance Magnetoresistivity Magnetotransport phenomena, materials for magnetotransport Manganites Mathematical models Physics
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Zusammenfassung:	We present measurements of the anisotropic magnetoresistance (AMR) of La(0.75)Sr(0.25)MnO(3) films deposited on (001) SrTiO(3) substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10(-3) for the current I parallel to the [100] axis of the crystal and vanishing AMR for I , in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.
ISSN:	0953-8984 1361-648X
DOI:	10.1088/0953-8984/22/14/146001