SWNT array resonant gate MOS transistor

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integr...

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Veröffentlicht in:Nanotechnology 2011-02, Vol.22 (5), p.055204-055204
Hauptverfasser: Arun, A, Campidelli, S, Filoramo, A, Derycke, V, Salet, P, Ionescu, A M, Goffman, M F
Format: Artikel
Sprache:eng
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Zusammenfassung:We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/5/055204