Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The re...

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Veröffentlicht in:Nanotechnology 2009-04, Vol.20 (13), p.135701-135701
Hauptverfasser: He, J H, Chang, P H, Chen, C Y, Tsai, K T
Format: Artikel
Sprache:eng
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Zusammenfassung:We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 x 10(-5) Omega cm(2). The resistivity of the ZnO NWs is measured to be 2.2 x 10(-2) Omega cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as approximately 10(8) have been fabricated and characterized.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/20/13/135701